Fairchild Semiconductor FQU1N80TU

FQU1N80TU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Gate Charge (Qg) (Max) @ Vgs:
7.2 nC @ 10 V
Rds On (Max) @ Id, Vgs:
20Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Power Dissipation (Max):
2.5W (Ta), 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
195 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I-PAK
Current - Continuous Drain (Id) @ 25°C:
1A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQU1N80TU. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum gate charge and given voltages include 7.2 nc @ 10 v. It has a maximum Rds On and voltage of 20ohm @ 500ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 800 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 2.5w (ta), 45w (tc). The product's input capacitance at maximum includes 195 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i-pak is the supplier device package value. The continuous current drain at 25°C is 1a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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