Fairchild Semiconductor FQP8N90C

FQP8N90C Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 10 V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 3.15A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Power Dissipation (Max):
171W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2080 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
6.3A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQP8N90C. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 45 nc @ 10 v. It has a maximum Rds On and voltage of 1.9ohm @ 3.15a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 900 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 171w (tc). The product's input capacitance at maximum includes 2080 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 6.3a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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