Fairchild Semiconductor FQN1N60CTA

FQN1N60CTA Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Rds On (Max) @ Id, Vgs:
11.5Ohm @ 150mA, 10V
Gate Charge (Qg) (Max) @ Vgs:
6.2 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
1W (Ta), 3W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
TO-92-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
300mA (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQN1N60CTA. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa) formed leads. It has a maximum Rds On and voltage of 11.5ohm @ 150ma, 10v. The maximum gate charge and given voltages include 6.2 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 1w (ta), 3w (tc). The product's input capacitance at maximum includes 170 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. to-92-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 300ma (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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