Fairchild Semiconductor FQI4N90TU

FQI4N90TU Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
3.3Ohm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
30 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
900 V
Vgs (Max):
±30V
Power Dissipation (Max):
3.13W (Ta), 140W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1100 pF @ 25 V
Mounting Type:
Through Hole
Series:
QFET®
Supplier Device Package:
I2PAK (TO-262)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQI4N90
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQI4N90TU. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 3.3ohm @ 2.1a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 900 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 3.13w (ta), 140w (tc). The product's input capacitance at maximum includes 1100 pf @ 25 v. The product is available in through hole configuration. The product qfet®, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 4.2a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqi4n90, a base product number of the product. The product is designated with the ear99 code number.

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