Fairchild Semiconductor FQB25N33TM-F085

FQB25N33TM-F085 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
75 nC @ 15 V
Rds On (Max) @ Id, Vgs:
230mOhm @ 12.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
330 V
Vgs (Max):
±30V
Power Dissipation (Max):
3.1W (Ta), 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2010 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
25A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FQB25N33TM-F085. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 75 nc @ 15 v. It has a maximum Rds On and voltage of 230mohm @ 12.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 330 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 3.1w (ta), 250w (tc). The product's input capacitance at maximum includes 2010 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 25a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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