National Semiconductor FDS6375

National Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
24mOhm @ 8A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
2694 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
8A (Ta)
Power Dissipation (Max):
2.5W (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by National Semiconductor. The manufacturer part number is FDS6375. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 36 nc @ 4.5 v. It has a maximum Rds On and voltage of 24mohm @ 8a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 2694 pf @ 10 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 8a (ta). The product carries maximum power dissipation 2.5w (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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