Fairchild Semiconductor FDP2D3N10C

FDP2D3N10C Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 700µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 100A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Power Dissipation (Max):
214W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
11180 pF @ 50 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
222A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDP2D3
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDP2D3N10C. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 700µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 152 nc @ 10 v. It has a maximum Rds On and voltage of 2.3mohm @ 100a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 214w (tc). The product's input capacitance at maximum includes 11180 pf @ 50 v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 222a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdp2d3, a base product number of the product. The product is designated with the ear99 code number.

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FDP2D3N10C, FDPF2D3N10C(Datasheets)

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