Fairchild Semiconductor FDP050AN06A0

FDP050AN06A0 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Rds On (Max) @ Id, Vgs:
5mOhm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
245W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 25 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 80A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDP050AN06A0. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 80 nc @ 10 v. It has a maximum Rds On and voltage of 5mohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 245w (tc). The product's input capacitance at maximum includes 3900 pf @ 25 v. The product is available in through hole configuration. The product powertrench®, is a highly preferred choice for users. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 18a (ta), 80a (tc). This product use mosfet (metal oxide) technology.

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