Fairchild Semiconductor FDP047N08-F102

Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
0000.00.0000
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
152 nC @ 10 V
Rds On (Max) @ Id, Vgs:
4.7Ohm @ 80A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±20V
Power Dissipation (Max):
268W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
9415 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
164A (Tc)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDP047N08-F102. It is assigned with possible HTSUS value of 0000.00.0000. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 152 nc @ 10 v. It has a maximum Rds On and voltage of 4.7ohm @ 80a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 268w (tc). The product's input capacitance at maximum includes 9415 pf @ 25 v. The product is available in through hole configuration. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 164a (tc). This product use mosfet (metal oxide) technology.

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FDP047N08-F102 Datasheet(Datasheets)

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