Fairchild Semiconductor FDFM2N111

FDFM2N111 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs:
3.8 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
100mOhm @ 4A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
1.7W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
273 pF @ 10 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
MicroFET 3x3mm
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDFM2N111. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. The maximum gate charge and given voltages include 3.8 nc @ 4.5 v. It has a maximum Rds On and voltage of 100mohm @ 4a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 1.7w (ta). The product's input capacitance at maximum includes 273 pf @ 10 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. microfet 3x3mm is the supplier device package value. The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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