Fairchild Semiconductor FDB8870

FDB8870 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs:
132 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Power Dissipation (Max):
160W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5200 pF @ 15 V
Mounting Type:
Surface Mount
Series:
PowerTrench®
Supplier Device Package:
TO-263 (D2PAK)
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
23A (Ta), 160A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FDB8870. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 3.9mohm @ 35a, 10v. The maximum gate charge and given voltages include 132 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 160w (tc). The product's input capacitance at maximum includes 5200 pf @ 15 v. The product is available in surface mount configuration. The product powertrench®, is a highly preferred choice for users. to-263 (d2pak) is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 23a (ta), 160a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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