Fairchild Semiconductor FCPF260N65FL1

FCPF260N65FL1 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
Vgs(th) (Max) @ Id:
5V @ 1.5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
260mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
edacadModel:
FCPF260N65FL1 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/13508960
Drain to Source Voltage (Vdss):
650 V
Vgs (Max):
±20V
Power Dissipation (Max):
36W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2340 pF @ 100 V
Mounting Type:
Through Hole
Series:
FRFET®, SuperFET® II
Supplier Device Package:
TO-220F-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCPF260N65FL1. It is assigned with possible HTSUS value of 8542.39.0001. The typical Vgs (th) (max) of the product is 5v @ 1.5ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 260mohm @ 7.5a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 36w (tc). The product's input capacitance at maximum includes 2340 pf @ 100 v. The product is available in through hole configuration. The product frfet®, superfet® ii, is a highly preferred choice for users. to-220f-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 15a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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