Fairchild Semiconductor FCH35N60

FCH35N60 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8542.39.0001
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
98mOhm @ 17.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
181 nC @ 10 V
Vgs(th) (Max) @ Id:
5V @ 250µA
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
312.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
6640 pF @ 25 V
Mounting Type:
Through Hole
Series:
SuperMOS™
Supplier Device Package:
TO-247
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is FCH35N60. It is assigned with possible HTSUS value of 8542.39.0001. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-247-3. It has a maximum Rds On and voltage of 98mohm @ 17.5a, 10v. The maximum gate charge and given voltages include 181 nc @ 10 v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 312.5w (tc). The product's input capacitance at maximum includes 6640 pf @ 25 v. The product is available in through hole configuration. The product supermos™, is a highly preferred choice for users. to-247 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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