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This is manufactured by NXP USA Inc.. The manufacturer part number is BUK769R6-80E,118. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 59.8 nc @ 10 v. It has a maximum Rds On and voltage of 9.6mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 80 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 182w (tc). The product's input capacitance at maximum includes 4682 pf @ 25 v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
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A transistor is a semiconductor device that is used to amplify or switch electrical impulses such as NXP USA Inc. BUK769R6-80E,118. The transistor is a fundamental component of contemporary electronics Transistors - FETs, MOSFETs - Single. Our potential items have been shown to be the best in the world, and we provide overnight shipping for the purchase you made over here NXP USA Inc. BUK769R6-80E,118. If you have any questions regarding the Transistors - FETs, MOSFETs - Single, please contact us by emailing sales@enrgtech.co.uk or calling +44 (0) 3303 800 157.
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