Infineon Technologies BTS244ZE3062ANTMA1

BTS244ZE3062ANTMA1 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 130µA
Operating Temperature:
-40°C ~ 175°C (TJ)
Package / Case:
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Gate Charge (Qg) (Max) @ Vgs:
130 nC @ 10 V
Rds On (Max) @ Id, Vgs:
13mOhm @ 19A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±20V
Power Dissipation (Max):
170W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2660 pF @ 25 V
Mounting Type:
Surface Mount
Series:
*
Supplier Device Package:
PG-TO263-5-2
Current - Continuous Drain (Id) @ 25°C:
35A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BTS244ZE3062ANTMA1. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 130µa. The product has -40°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-5, d²pak (4 leads + tab), to-263bb. The maximum gate charge and given voltages include 130 nc @ 10 v. It has a maximum Rds On and voltage of 13mohm @ 19a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 170w (tc). The product's input capacitance at maximum includes 2660 pf @ 25 v. The product is available in surface mount configuration. pg-to263-5-2 is the supplier device package value. The continuous current drain at 25°C is 35a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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