NXP USA Inc. BSS84AKM,315

BSS84AKM-315 NXP USA Inc. BSS84AKM,315
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-101, SOT-883
Gate Charge (Qg) (Max) @ Vgs:
0.35 nC @ 5 V
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 100mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Power Dissipation (Max):
340mW (Ta), 2.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
36 pF @ 25 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
DFN1006-3
Current - Continuous Drain (Id) @ 25°C:
230mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BSS84AKM,315. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-101, sot-883. The maximum gate charge and given voltages include 0.35 nc @ 5 v. It has a maximum Rds On and voltage of 7.5ohm @ 100ma, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 340mw (ta), 2.7w (tc). The product's input capacitance at maximum includes 36 pf @ 25 v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. dfn1006-3 is the supplier device package value. The continuous current drain at 25°C is 230ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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