Infineon Technologies BSS606NH6327

BSS606NH6327 Infineon Technologies
Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.3V @ 15µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-243AA
Gate Charge (Qg) (Max) @ Vgs:
5.6 nC @ 5 V
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.2A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
657 pF @ 25 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 3
Supplier Device Package:
PG-SOT89-4-2
Current - Continuous Drain (Id) @ 25°C:
3.2A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
Checking for live stock

This is manufactured by Infineon Technologies. The manufacturer part number is BSS606NH6327. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.3v @ 15µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-243aa. The maximum gate charge and given voltages include 5.6 nc @ 5 v. It has a maximum Rds On and voltage of 60mohm @ 3.2a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 1w (ta). The product's input capacitance at maximum includes 657 pf @ 25 v. The product is available in surface mount configuration. The product optimos™ 3, is a highly preferred choice for users. pg-sot89-4-2 is the supplier device package value. The continuous current drain at 25°C is 3.2a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship BSS606NH6327 Internationally to many countries around the world.