Infineon Technologies BSS214NWH6327

Infineon Technologies

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.2V @ 3.7µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-70, SOT-323
Gate Charge (Qg) (Max) @ Vgs:
0.8 nC @ 5 V
Rds On (Max) @ Id, Vgs:
140mOhm @ 1.5A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±12V
Power Dissipation (Max):
500mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
143 pF @ 10 V
Mounting Type:
Surface Mount
Series:
OptiMOS™ 2
Supplier Device Package:
PG-SOT323-3-2
Current - Continuous Drain (Id) @ 25°C:
1.5A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Infineon Technologies. The manufacturer part number is BSS214NWH6327. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 3.7µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. The maximum gate charge and given voltages include 0.8 nc @ 5 v. It has a maximum Rds On and voltage of 140mohm @ 1.5a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. The product carries maximum power dissipation 500mw (ta). The product's input capacitance at maximum includes 143 pf @ 10 v. The product is available in surface mount configuration. The product optimos™ 2, is a highly preferred choice for users. pg-sot323-3-2 is the supplier device package value. The continuous current drain at 25°C is 1.5a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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Yes. We ship BSS214NWH6327 Internationally to many countries around the world.