NXP USA Inc. 2N7002BK,215

2N7002BK-215 NXP USA Inc. 2N7002BK,215
NXP USA Inc.

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.1V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.6 nC @ 4.5 V
Rds On (Max) @ Id, Vgs:
1.6Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Power Dissipation (Max):
370mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
SOT-23
Current - Continuous Drain (Id) @ 25°C:
350mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N7002
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is 2N7002BK,215. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 0.6 nc @ 4.5 v. It has a maximum Rds On and voltage of 1.6ohm @ 500ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. The product carries maximum power dissipation 370mw (ta). The product's input capacitance at maximum includes 50 pf @ 10 v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. sot-23 is the supplier device package value. The continuous current drain at 25°C is 350ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2n7002, a base product number of the product. The product is designated with the ear99 code number.

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