Fairchild Semiconductor 2N7000

2N7000 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
TO-226-3, TO-92-3 (TO-226AA)
Gate Charge (Qg) (Max) @ Vgs:
2 nC @ 5 V
Rds On (Max) @ Id, Vgs:
5Ohm @ 500mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±18V
Power Dissipation (Max):
350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
43 pF @ 25 V
Mounting Type:
Through Hole
Series:
STripFET™
Supplier Device Package:
TO-92-3
Current - Continuous Drain (Id) @ 25°C:
350mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
2N70
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is 2N7000. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). The maximum gate charge and given voltages include 2 nc @ 5 v. It has a maximum Rds On and voltage of 5ohm @ 500ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±18v. The product carries maximum power dissipation 350mw (ta). The product's input capacitance at maximum includes 43 pf @ 25 v. The product is available in through hole configuration. The product stripfet™, is a highly preferred choice for users. to-92-3 is the supplier device package value. The continuous current drain at 25°C is 350ma (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 2n70, a base product number of the product. The product is designated with the ear99 code number.

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