NXP Semiconductors PMZB950UPELYL

PMZB950UPELYL NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XFDFN
Gate Charge (Qg) (Max) @ Vgs:
2.1 nC @ 4.5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 500mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
360mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
43 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1006B-3
Current - Continuous Drain (Id) @ 25°C:
500mA (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is PMZB950UPELYL. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xfdfn. The maximum gate charge and given voltages include 2.1 nc @ 4.5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 1.4ohm @ 500ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. It is shipped in bulk package . The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 360mw (ta). The product's input capacitance at maximum includes 43 pf @ 10 v. The product is available in surface mount configuration. dfn1006b-3 is the supplier device package value. The continuous current drain at 25°C is 500ma (ta). This product use mosfet (metal oxide) technology.

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PMZB950UPEL(Datasheets)

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