NXP Semiconductors PMXB350UPEZ

PMXB350UPEZ NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
950mV @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
3-XDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
447mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
2.3 nC @ 4.5 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.2V, 4.5V
Drain to Source Voltage (Vdss):
20 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
360mW (Ta), 5.68W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
116 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010D-3
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PMXB350UPEZ. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. It has a maximum Rds On and voltage of 447mohm @ 1.2a, 4.5v. The maximum gate charge and given voltages include 2.3 nc @ 4.5 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.2v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 360mw (ta), 5.68w (tc). The product's input capacitance at maximum includes 116 pf @ 10 v. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 1.2a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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PMXB350UPE(Datasheets)

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