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NXP Semiconductors PHK12NQ03LT,518

PHK12NQ03LT-518 NXP Semiconductors PHK12NQ03LT,518
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
10.5mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs:
17.6 nC @ 5 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
2.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
1335 pF @ 16 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
8-SO
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
11.8A (Tj)
Technology:
MOSFET (Metal Oxide)
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This is manufactured by NXP Semiconductors. The manufacturer part number is PHK12NQ03LT,518. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 10.5mohm @ 12a, 10v. The maximum gate charge and given voltages include 17.6 nc @ 5 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 2.5w (ta). The product's input capacitance at maximum includes 1335 pf @ 16 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 11.8a (tj). This product use mosfet (metal oxide) technology.

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PHK12NQ03LT(Datasheets)

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