NXP Semiconductors PHB29N08T,118

PHB29N08T-118 NXP Semiconductors PHB29N08T,118
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
5V @ 2mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
50mOhm @ 14A, 11V
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
11V
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
810 pF @ 25 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
D2PAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is PHB29N08T,118. The typical Vgs (th) (max) of the product is 5v @ 2ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 50mohm @ 14a, 11v. The maximum gate charge and given voltages include 19 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 11v. The product has a 75 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 88w (tc). The product's input capacitance at maximum includes 810 pf @ 25 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. d2pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 27a (tc). This product use mosfet (metal oxide) technology.

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