NXP Semiconductors PH2525L,115

PH2525L-115 NXP Semiconductors PH2525L,115
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.15V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SC-100, SOT-669
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34.7 nC @ 4.5 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
25 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
62.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
4470 pF @ 12 V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
LFPAK56, Power-SO8
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is PH2525L,115. The typical Vgs (th) (max) of the product is 2.15v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sc-100, sot-669. It has a maximum Rds On and voltage of 2.5mohm @ 25a, 10v. The maximum gate charge and given voltages include 34.7 nc @ 4.5 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 25 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 62.5w (tc). The product's input capacitance at maximum includes 4470 pf @ 12 v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. lfpak56, power-so8 is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology.

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