NXP Semiconductors NX138BKR

NX138BKR NXP Semiconductors
NXP Semiconductors

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs:
0.49 nC @ 4.5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
3.5Ohm @ 200mA, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
310mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
20.2 pF @ 30 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Current - Continuous Drain (Id) @ 25°C:
265mA (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is NX138BKR. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum gate charge and given voltages include 0.49 nc @ 4.5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 3.5ohm @ 200ma, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. It is shipped in bulk package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 310mw (ta). The product's input capacitance at maximum includes 20.2 pf @ 30 v. The product is available in surface mount configuration. to-236ab is the supplier device package value. The continuous current drain at 25°C is 265ma (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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NX138BK(Datasheets)

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FAQs

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