Fairchild Semiconductor IRFR120

IRFR120 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
270mOhm @ 4.6A, 10V
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
REACH Status:
REACH Affected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
2.5W (Ta), 42W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
360 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
title:
IRFR120
Supplier Device Package:
DPAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
7.7A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRFR120. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 270mohm @ 4.6a, 10v. The maximum gate charge and given voltages include 16 nc @ 10 v. In addition, it is reach affected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 2.5w (ta), 42w (tc). The product's input capacitance at maximum includes 360 pf @ 25 v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 7.7a (tc). This product use mosfet (metal oxide) technology.

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Yes. We ship IRFR120 Internationally to many countries around the world.