Fairchild Semiconductor IRF9540

IRF9540 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
200mOhm @ 11A, 10V
Gate Charge (Qg) (Max) @ Vgs:
61 nC @ 10 V
REACH Status:
REACH Affected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
150W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1400 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220AB
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Fairchild Semiconductor. The manufacturer part number is IRF9540. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 200mohm @ 11a, 10v. The maximum gate charge and given voltages include 61 nc @ 10 v. In addition, it is reach affected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 150w (tc). The product's input capacitance at maximum includes 1400 pf @ 25 v. The product is available in through hole configuration. to-220ab is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 19a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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