Fairchild Semiconductor HUF76639S3ST-F085

HUF76639S3ST-F085 Fairchild Semiconductor
Fairchild Semiconductor

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
86 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
26mOhm @ 51A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
180W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2400 pF @ 25 V
Mounting Type:
Surface Mount
Series:
UltraFET™
Supplier Device Package:
D²PAK (TO-263)
Current - Continuous Drain (Id) @ 25°C:
51A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Fairchild Semiconductor. The manufacturer part number is HUF76639S3ST-F085. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 86 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 26mohm @ 51a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 180w (tc). The product's input capacitance at maximum includes 2400 pf @ 25 v. The product is available in surface mount configuration. The product ultrafet™, is a highly preferred choice for users. d²pak (to-263) is the supplier device package value. The continuous current drain at 25°C is 51a (tc). This product use mosfet (metal oxide) technology.

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FAQs

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