NXP Semiconductors BUK9E08-55B,127

BUK9E08-55B-127 NXP Semiconductors BUK9E08-55B,127
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
45 nC @ 5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
7mOhm @ 25A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Package:
Bulk
Drain to Source Voltage (Vdss):
55 V
Vgs (Max):
±15V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
203W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
5280 pF @ 25 V
Mounting Type:
Through Hole
Series:
Automotive, AEC-Q101, TrenchMOS™
Supplier Device Package:
I2PAK
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is BUK9E08-55B,127. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 45 nc @ 5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 7mohm @ 25a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in bulk package . The product has a 55 v drain to source voltage. The maximum Vgs rate is ±15v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 203w (tc). The product's input capacitance at maximum includes 5280 pf @ 25 v. The product is available in through hole configuration. The product automotive, aec-q101, trenchmos™, is a highly preferred choice for users. i2pak is the supplier device package value. The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology.

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BUK9E08-55B(Datasheets)

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