NXP Semiconductors BUK6E4R0-75C,127

BUK6E4R0-75C-127 NXP Semiconductors BUK6E4R0-75C,127
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs:
4.2mOhm @ 25A, 10V
title:
BUK6E4R0-75C,127
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
75 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
306W (Tc)
Qualification:
AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds:
15450 pF @ 25 V
Mounting Type:
Through Hole
Grade:
Automotive
Series:
TrenchMOS™
Gate Charge (Qg) (Max) @ Vgs:
234 nC @ 10 V
Supplier Device Package:
I2PAK
Packaging:
Bulk
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is BUK6E4R0-75C,127. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i2pak, to-262aa. It has a maximum Rds On and voltage of 4.2mohm @ 25a, 10v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 75 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 306w (tc). The product's input capacitance at maximum includes 15450 pf @ 25 v. The product is available in through hole configuration. The product is automotive, a grade of class. The product trenchmos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 234 nc @ 10 v. i2pak is the supplier device package value. In addition, bulk is the available packaging type of the product. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology.

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BUK6E4R0-75C(Datasheets)

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