NXP Semiconductors BUK6212-40C,118

BUK6212-40C-118 NXP Semiconductors BUK6212-40C,118
NXP Semiconductors

Product Information

FET Feature:
-
Vgs(th) (Max) @ Id:
2.8V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
33.9 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
11.2mOhm @ 12A, 10V
FET Type:
N-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
80W
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchMOS™
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
50A (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by NXP Semiconductors. The manufacturer part number is BUK6212-40C,118. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 33.9 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 11.2mohm @ 12a, 10v. It carries FET type n-channel. It is shipped in bulk package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is vendor undefined. The product carries maximum power dissipation 80w. The product's input capacitance at maximum includes 1900 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. The product trenchmos™, is a highly preferred choice for users. dpak is the supplier device package value. The continuous current drain at 25°C is 50a (ta). This product use mosfet (metal oxide) technology.

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BUK6212-40C(Datasheets)

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