Toshiba Semiconductor and Storage TPH4R50ANH1,LQ

TPH4R50ANH1-LQ Toshiba Semiconductor and Storage TPH4R50ANH1,LQ
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 1mA
Operating Temperature:
150°C
Package / Case:
8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs:
58 nC @ 10 V
RoHS Status:
ROHS3 Compliant
Rds On (Max) @ Id, Vgs:
4.5mOhm @ 46A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
5200 pF @ 50 V
standardLeadTime:
32 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSVIII-H
Supplier Device Package:
8-SOP Advance (5x5.75)
Current - Continuous Drain (Id) @ 25°C:
92A (Tc)
Power Dissipation (Max):
800mW (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPH4R50ANH1,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 8-powertdfn. The maximum gate charge and given voltages include 58 nc @ 10 v. The product is rohs3 compliant. It has a maximum Rds On and voltage of 4.5mohm @ 46a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 5200 pf @ 50 v. It has a long 32 weeks standard lead time. The product is available in surface mount configuration. The product u-mosviii-h, is a highly preferred choice for users. 8-sop advance (5x5.75) is the supplier device package value. The continuous current drain at 25°C is 92a (tc). The product carries maximum power dissipation 800mw (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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