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United Kingdom
This is manufactured by Infineon Technologies. The manufacturer part number is IRF5803D2PBF. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 112mohm @ 3.4a, 10v. The maximum gate charge and given voltages include 37 nc @ 10 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta). The product's input capacitance at maximum includes 1110 pf @ 25 v. The product is available in surface mount configuration. The product fetky™, is a highly preferred choice for users. 8-so is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3.4a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.
For more information please check the datasheets.
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