Toshiba Semiconductor and Storage TPHR6503PL1,LQ

Enrgtech Part No: ET21836079
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Manufacturer Part No:
TPHR6503PL1,LQ
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Manufacturer: Toshiba Semiconductor and Storage

TPHR6503PL1-LQ Toshiba Semiconductor and Storage TPHR6503PL1,LQ

Product Information

FET Feature:

HTSUS:

8541.29.0095

Vgs(th) (Max) @ Id:

2.1V @ 1mA

Operating Temperature:

175°C

Package / Case:

8-PowerTDFN

Rds On (Max) @ Id, Vgs:

0.65mOhm @ 50A, 10V

title:

TPHR6503PL1,LQ

edacadModel:

TPHR6503PL1,LQ Models

FET Type:

N-Channel

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

edacadModelUrl:

/en/models/14636880

Drain to Source Voltage (Vdss):

30 V

Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPHR6503PL1,LQ. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.1v @ 1ma. The product has 175°c operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 0.65mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 960mw (ta), 210w (tc). It has a long 32 weeks standard lead time. The product's input capacitance at maximum includes 10000 pf @ 15 v. The product is available in surface mount configuration. The product u-mosix-h, is a highly preferred choice for users. The maximum gate charge and given voltages include 110 nc @ 10 v. 8-sop advance (5x5.75) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 150a (tc). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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