Toshiba Semiconductor and Storage TK370A60F,S4X(S

TK370A60F-S4X-S Toshiba Semiconductor and Storage TK370A60F,S4X(S
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 2.04mA
Operating Temperature:
150°C
Package / Case:
TO-220-3 Full Pack
Gate Charge (Qg) (Max) @ Vgs:
55 nC @ 10 V
Rds On (Max) @ Id, Vgs:
370mOhm @ 7.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Power Dissipation (Max):
45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2200 pF @ 300 V
Mounting Type:
Through Hole
Series:
U-MOSIX
Supplier Device Package:
TO-220SIS
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TK370A60F,S4X(S. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 2.04ma. The product has 150°c operating temperature range. Moreover, the product comes in to-220-3 full pack. The maximum gate charge and given voltages include 55 nc @ 10 v. It has a maximum Rds On and voltage of 370mohm @ 7.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. The product carries maximum power dissipation 45w (tc). The product's input capacitance at maximum includes 2200 pf @ 300 v. The product is available in through hole configuration. The product u-mosix, is a highly preferred choice for users. to-220sis is the supplier device package value. The continuous current drain at 25°C is 15a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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FAQs

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