onsemi NVD5803NT4G

NVD5803NT4G onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
5.7mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs:
51 nC @ 10 V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
NVD5803NT4G Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
edacadModelUrl:
/en/models/2482001
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
40 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
83W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3220 pF @ 25 V
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
-
Supplier Device Package:
DPAK
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NVD580
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NVD5803NT4G. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 5.7mohm @ 50a, 10v. The maximum gate charge and given voltages include 51 nc @ 10 v. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 83w (tc). The product's input capacitance at maximum includes 3220 pf @ 25 v. The product is available in surface mount configuration. The product is automotive, a grade of class. dpak is the supplier device package value. The continuous current drain at 25°C is 85a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to nvd580, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)
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NVD5803NT4G 02/Sep/2016(PCN Assembly/Origin)
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Mold Compound Update 25/Feb/2015(PCN Design/Specification)
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Mold Compound Revision 24/Apr/2015(PCN Design/Specification)
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Reactivation 29/Aug/2018(PCN Obsolescence/ EOL)
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Mult Dev EOL 20/Dec/2021(PCN Obsolescence/ EOL)
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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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NVD5803N(Datasheets)

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