onsemi NTMSD3P303R2G

NTMSD3P303R2G onsemi
onsemi

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.05A, 10V
edacadModel:
NTMSD3P303R2G Models
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/921595
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power Dissipation (Max):
730mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 24 V
Mounting Type:
Surface Mount
Series:
FETKY™
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
2.34A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMSD3
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMSD3P303R2G. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. The maximum gate charge and given voltages include 25 nc @ 10 v. In addition, it is reach unaffected. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 730mw (ta). The product's input capacitance at maximum includes 750 pf @ 24 v. The product is available in surface mount configuration. The product fetky™, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 2.34a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmsd3, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 13/Apr/2009(PCN Obsolescence/ EOL)
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NTMSD3P303R2(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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