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This is manufactured by onsemi. The manufacturer part number is NTD5865N-1G. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 18mohm @ 20a, 10v. The maximum gate charge and given voltages include 23 nc @ 10 v. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 60 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 71w (tc). The product's input capacitance at maximum includes 1261 pf @ 25 v. The product is available in surface mount configuration. dpak is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 43a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntd58, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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