Maximum Continuous Drain Current:
44 A
Transistor Material:
SiC
Width:
4.82mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
1200 V
Maximum Gate Threshold Voltage:
4.3V
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.8V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
56 nC @ 20 V
Channel Type:
N
Length:
15.87mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
348 W
Maximum Gate Source Voltage:
-15 V, +20 V
Height:
20.82mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
4V
Maximum Drain Source Resistance:
162 mΩ
FET Feature:
-
Vgs(th) (Max) @ Id:
4.3V @ 5mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-247-3
Rds On (Max) @ Id, Vgs:
110mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 20 V
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
20V
Package:
Bulk
Drain to Source Voltage (Vdss):
1200 V
Vgs (Max):
+25V, -15V
Moisture Sensitivity Level (MSL):
Vendor Undefined
Power Dissipation (Max):
348W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1670 pF @ 800 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-247-3
Current - Continuous Drain (Id) @ 25°C:
44A (Tc)
Technology:
SiCFET (Silicon Carbide)
