Maximum Drain Source Voltage:
80 V
Typical Gate Charge @ Vgs:
10 nC @ 6 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
3.8 W
Maximum Gate Source Voltage:
±20 V
Maximum Gate Threshold Voltage:
4V
Channel Type:
N
Width:
6.1mm
Length:
5.1mm
Maximum Drain Source Resistance:
8 mΩ
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
89 A
Minimum Gate Threshold Voltage:
2V
Forward Diode Voltage:
1.2V
Height:
1.05mm
Maximum Operating Temperature:
+175 °C
Pin Count:
5
Transistor Configuration:
Single
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 120µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Rds On (Max) @ Id, Vgs:
5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
80 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
3.8W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
2085 pF @ 40 V
standardLeadTime:
11 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Current - Continuous Drain (Id) @ 25°C:
17A (Ta), 89A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMFS6
ECCN:
EAR99
