onsemi RFP8P05

RFP8P05 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
RoHS non-compliant
Package / Case:
TO-220-3
Rds On (Max) @ Id, Vgs:
300mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 20 V
Vgs(th) (Max) @ Id:
4V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
50 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP8P
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is RFP8P05. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs non-compliant. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 300mohm @ 8a, 10v. The maximum gate charge and given voltages include 80 nc @ 20 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 50 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in through hole configuration. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rfp8p, a base product number of the product. The product is designated with the ear99 code number.

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RFD8P05/SM, RFP8P05(Datasheets)
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onsemi RoHS(Environmental Information)

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FAQs

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We use our internationally recognized delivery partners UPS/DHL. Collection of ET21548307 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "onsemi" products on our website by using Enrgtech's Unique Manufacturing Part Number ET21548307.
Yes. We ship RFP8P05 Internationally to many countries around the world.