onsemi RFP3055LE

RFP3055LE onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3
Gate Charge (Qg) (Max) @ Vgs:
11.3 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
107mOhm @ 8A, 5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V
Package:
Tube
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
350 pF @ 25 V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-220-3
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
RFP30
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is RFP3055LE. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3. The maximum gate charge and given voltages include 11.3 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 107mohm @ 8a, 5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It is shipped in tube package . The product has a 60 v drain to source voltage. The maximum Vgs rate is ±16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 38w (tc). The product's input capacitance at maximum includes 350 pf @ 25 v. The product is available in through hole configuration. to-220-3 is the supplier device package value. The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to rfp30, a base product number of the product. The product is designated with the ear99 code number.

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RFD3055LE,LESM,%20RFP3055LE(Datasheets)
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onsemi RoHS(Environmental Information)

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