onsemi NTMSD2P102R2SG

NTMSD2P102R2SG onsemi
onsemi

Product Information

FET Feature:
Schottky Diode (Isolated)
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs:
18 nC @ 4.5 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
90mOhm @ 2.4A, 4.5V
FET Type:
P-Channel
Package:
Bulk
Drain to Source Voltage (Vdss):
20 V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 16 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
2.3A (Ta)
Power Dissipation (Max):
-
Technology:
MOSFET (Metal Oxide)
Base Product Number:
NTMSD2
ECCN:
EAR99
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is NTMSD2P102R2SG. The FET features of the product include schottky diode (isolated). It is assigned with possible HTSUS value of 8541.29.0095. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The maximum gate charge and given voltages include 18 nc @ 4.5 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 90mohm @ 2.4a, 4.5v. It carries FET type p-channel. It is shipped in bulk package . The product has a 20 v drain to source voltage. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 750 pf @ 16 v. The product is available in surface mount configuration. 8-soic is the supplier device package value. The continuous current drain at 25°C is 2.3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmsd2, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 03/Apr/2007(PCN Obsolescence/ EOL)
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Copper Wire 12/May/2009(PCN Design/Specification)
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