onsemi ISL9N302AS3

ISL9N302AS3 onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
3V @ 250µA
Operating Temperature:
-
Package / Case:
TO-262-3 Long Leads, I²Pak, TO-262AA
Gate Charge (Qg) (Max) @ Vgs:
300 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
2.3mOhm @ 75A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Package:
Tube
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
11000 pF @ 15 V
Mounting Type:
Through Hole
Series:
UltraFET™
Supplier Device Package:
I2PAK (TO-262)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Power Dissipation (Max):
345W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
ISL9
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is ISL9N302AS3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 3v @ 250µa. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. The maximum gate charge and given voltages include 300 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 2.3mohm @ 75a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tube package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 11000 pf @ 15 v. The product is available in through hole configuration. The product ultrafet™, is a highly preferred choice for users. i2pak (to-262) is the supplier device package value. The continuous current drain at 25°C is 75a (tc). The product carries maximum power dissipation 345w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to isl9, a base product number of the product. The product is designated with the ear99 code number.

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