onsemi FQD2N60CTM-WS

FQD2N60CTM-WS onsemi
FQD2N60CTM-WS
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs:
4.7Ohm @ 950mA, 10V
edacadModel:
FQD2N60CTM-WS Models
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
edacadModelUrl:
/en/models/4806438
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.5W (Ta), 44W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
235 pF @ 25 V
Mounting Type:
Surface Mount
Series:
QFET®
Supplier Device Package:
TO-252AA
Current - Continuous Drain (Id) @ 25°C:
1.9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FQD2N60
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is FQD2N60CTM-WS. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. It has a maximum Rds On and voltage of 4.7ohm @ 950ma, 10v. The maximum gate charge and given voltages include 12 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.5w (ta), 44w (tc). The product's input capacitance at maximum includes 235 pf @ 25 v. The product is available in surface mount configuration. The product qfet®, is a highly preferred choice for users. to-252aa is the supplier device package value. The continuous current drain at 25°C is 1.9a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fqd2n60, a base product number of the product. The product is designated with the ear99 code number.

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onsemi RoHS(Environmental Information)
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Description Chg 01/Apr/2016(PCN Design/Specification)
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Logo 17/Aug/2017(PCN Design/Specification)
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FQD2N60C, FQU2N60C(Datasheets)
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Mult Devices 24/Oct/2017(PCN Packaging)
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DPAK3 (TO−252 3 LD) Mechanical Case Outline(Other Related Documents)
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Mult Device Part Number Chg 30/May/2017(PCN Part Number)

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FAQs

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You will get a confirmation email regarding your order of onsemi FQD2N60CTM-WS. You can also check on our website or by contacting our customer support team for further order details on onsemi FQD2N60CTM-WS.
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