onsemi FDPF8D5N10C

FDPF8D5N10C onsemi
onsemi

Product Information

Maximum Continuous Drain Current:
76 A
Width:
4.9mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220F
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
25 nC @ 10 V
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
35 W
Maximum Gate Source Voltage:
±20 V
Height:
16.07mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.3V
Maximum Drain Source Resistance:
8.5 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
8.5mOhm @ 76A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs(th) (Max) @ Id:
4V @ 130µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
Not Applicable
Power Dissipation (Max):
2.4W (Ta), 35W (Tc)
standardLeadTime:
24 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
2475 pF @ 50 V
Mounting Type:
Through Hole
Series:
PowerTrench®
Supplier Device Package:
TO-220F-3
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
76A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
FDPF8
ECCN:
EAR99
RoHs Compliant
Checking for live stock

This is manufactured by onsemi. The manufacturer part number is FDPF8D5N10C. While 76 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 25 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 16.07mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.3v . It provides up to 8.5 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 8.5mohm @ 76a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 130µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is not applicable. The product carries maximum power dissipation 2.4w (ta), 35w (tc). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 2475 pf @ 50 v. The product powertrench®, is a highly preferred choice for users. to-220f-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 76a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to fdpf8, a base product number of the product. The product is designated with the ear99 code number.

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Datasheet(Technical Reference)
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onsemi RoHS(Environmental Information)
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Assembly and Test Qualification 26/Jul/2023(PCN Assembly/Origin)
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FDP8D5N10C, FDPF8D5N10C(Datasheets)

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