Central Semiconductor Corp CZDM1003N BK

CZDM1003N-BK Central Semiconductor Corp CZDM1003N BK
Central Semiconductor Corp

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-261-4, TO-261AA
Rds On (Max) @ Id, Vgs:
150mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
975 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-223
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
ECCN:
EAR99
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is CZDM1003N BK. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-261-4, to-261aa. It has a maximum Rds On and voltage of 150mohm @ 2a, 10v. The maximum gate charge and given voltages include 15 nc @ 10 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is 20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2w (ta). The product's input capacitance at maximum includes 975 pf @ 25 v. The product is available in surface mount configuration. sot-223 is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. The product is designated with the ear99 code number.

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CZDM1003N 07/Sep/2018(PCN Obsolescence/ EOL)
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CZDM1003N(Datasheets)
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RoHS Cert(Environmental Information)

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FAQs

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