onsemi 5HP01M-TL-H

5HP01M-TL-H onsemi
onsemi

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
SC-70, SOT-323
Gate Charge (Qg) (Max) @ Vgs:
1.32 nC @ 10 V
REACH Status:
REACH Unaffected
Rds On (Max) @ Id, Vgs:
22Ohm @ 40mA, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
50 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
6.2 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
MCP
Current - Continuous Drain (Id) @ 25°C:
70mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
5HP01
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is 5HP01M-TL-H. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sc-70, sot-323. The maximum gate charge and given voltages include 1.32 nc @ 10 v. In addition, it is reach unaffected. It has a maximum Rds On and voltage of 22ohm @ 40ma, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tape & reel (tr) package . The product has a 50 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150mw (ta). The product's input capacitance at maximum includes 6.2 pf @ 10 v. The product is available in surface mount configuration. mcp is the supplier device package value. The continuous current drain at 25°C is 70ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to 5hp01, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev EOL 19/Dec/2017(PCN Obsolescence/ EOL)
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5HP01M(Datasheets)
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onsemi RoHS(Environmental Information)
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onsemi REACH(Environmental Information)

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