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The NTRV4101PT1G from Onsemi is a high-performance P-channel MOSFET that offers exceptional power handling capabilities in a compact package. With its low on-resistance and advanced design, it enables efficient power switching and control in a wide range of applications.
The NTRV4101PT1G is a high-geared P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed by Onsemi for low-voltage applications. It is accommodated in a SOT23-3 package, which is a small surface-mount package with three pins. Its SOT23-3 package makes it suitable for limited space applications, and it can be used in various low-voltage power management circuits.
The NTRV4101PT1G is a P-channel MOSFET, which means it is designed to handle the negative voltage and control the current flow between the source and drain terminals. P-channel MOSFETs are typically utilised in power management applications and can be used for switching and amplification.
This MOSFET has a maximum voltage rating of 20V, which means it can handle up to 20 volts of potential difference across its terminals. It also has a current rating of 1.8A, indicating that it can take a continuous current flow of up to 1.8 amps without exceeding its thermal limits.
The NTRV4101PT1G is packaged in a SOT23-3 package, a small surface-mount package with three pins. The SOT23-3 package is compact and allows easy placement and soldering on circuit boards. It is widely used in applications where space is limited, such as portable electronics and small form factor devices.
The NTRV4101PT1G offers numerous features that enhance its performance and reliability. These features include:
The NTRV4101PT1G is qualified for various low-voltage applications requiring P-channel MOSFETs with a voltage rating 20V and a current handling capability of 1.8A. It can be employed in power management circuits, battery protection circuits, load switches, and other applications requiring efficient power control.
For more information please check the datasheets.
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